IRLBD59N04E mosfet equivalent, hexfet power mosfet.
G QGS VG QGD
Sense Diode Voltage Drop (V)
0.80
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
0.70
Charge
IF = 250uA
0.60
Fig 13a. Basic Gate Charge Waveform
Cu.
94.
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The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon .
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